EFFECT OF K-EXCESS ON ENERGY STORAGE DENSITY AND EFFICIENCY OF Bi0.5K0.5+xTiO3 FILMS

Nguyen Ngoc Minh; Bui Van Dan; Luong Xuan Dien; Phan Si Nguyen; Ngo Duc Quan

Nguyen Ngoc Minh Hung Yen University of Technology and Education
Bui Van Dan Hung Yen University of Technology and Education
Luong Xuan Dien School of Chemical Engineering, Hanoi University of Science and Technology
Phan Si Nguyen School of Engineering Physics, Hanoi University of Science and Technology
Ngo Duc Quan School of Engineering Physics, Hanoi University of Science and Technology

Keywords: Lead-free, Ferroelectric, Sol-Gel, BKT, Films

Abstract

In this work, we synthesized lead-free Bi0.5K0.5TiO3 (bismuth potassium titanate, BKT) ferroelectric films on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The microstructures, ferroelectric and energy-storage properties of the fi lms were investigated as a function of K-excess content. X-ray diffraction (XRD) patterns exhibited sharp diffraction peaks of the single-phase perovskite structure which confirmed that the films have reached the well-crystallized state. The films with K-excess content of 0.10 revealed the best ferroelectricity with the remnant polarization (Pr ) and maximum polarization (Pm) reaching the highest values of 9.6 μC/cm2 and 27.1 μC/cm2, respectively under the electric field of 400 kV/cm. These films also exhibited a large energy-storage density (Jreco ) of ~ 3.5 J/cm3. The obtained results indicate that the BKT fi lms have application potentials in advanced capacitors.

References

Baek J W, Cho J G, Rim G H, Kim E S, Google Patents, 1999.

Noma T, Takemura H, Google Patents, 2007.

Hyakutake H, Harada K. Electrical Engineering in Japan, 143(2), pp. 59-66, 2003.

Jih-Sheng L, Conf. Rec. of IEEE Power Electronics Specialists Conference, Baveno, Italy, pp. 432–437, 2002.

Tang P, Yu K, Xie X, Zhou S, Yao J, IEEE Transactions on Plasma Science. 45(7), pp. 1288-1294, 2017.

Burn I, Smyth D M. Journal of Materials Science, 7, pp. 339, 1972.

Hao X, Zhai J, Yao X. Journal of the American Ceramic Society, 92(5), pp.1133-1135, 2009.

Ye M, Sun Q, Chen X, Jiang Z, Wang F, Whatmore R. Journal of the American Ceramic Society. 94(10), pp. 3234-3236, 2011.

Buhrer C F. J. Chem. Soc., 36, pp. 798, 1962.

Ivanova V V, Kapyshev A G, Venevtsev Y N, Zhdanov G S, Izv. Akad. Nauk SSSR, 26(2), pp. 354-356, 1962.

Hiruma Y, Aoyagi R, Nagata H, Takenaka T, Jpn. J. Appl. Phys., 44(7A), 5040, 2005.

Li Z F, Wang C L, Zhong W L, Li J C, Zhao M L. Journal of Applied Physics, 94(4), pp. 2548-2552, 2003.

Yang J, Hou Y, Wang C, Zhu M, Yan H, Applied Physics Letters, 91(2), 023118, 2007.

Zuo R, Su S, Wu Y, Fu J, Wang M, Li L. Materials Chemistry and Physics, 110(2-3), pp. 311-315, 2008.

Quan N D, Huu Bac L, Thiet D V, Hung V N, Dung D D. Adv. Mater. Sci. Eng., pp. 1-13, 2014.

Hu G D, Fan S H, Yang C H, Wu W B. Applied Physics Letters, 92(19), 192905, 2008.

Zhang Z, Wu P, Lu L, Shu C. Applied Physics Letters, 92(11), 112909, 2008.

Borkar H, Singh V N, Singh B P, Tomar M, Gupta V, Kumar A. RSC Adv., 4(44), pp. 22840-22847, 2014.

Sun Z, Li L, Yu S, Kang X, Chen S. Dalton transactions, 46(41), pp. 14341-14347, 2017.